Comprehensive Characterization of the 4H-SiC Planar and Trench Gate MOSFETs From Cryogenic to High Temperature

• Published in: IEEE transactions on electron devices Vol. 66; no. 10; pp. 4279 - 4286
• Main Authors: Tian, Kai, Hallen, Anders, Qi, Jinwei, Nawaz, Muhammad, Ma, Shenhui, Wang, Menghua, Guo, Shuwen, Elgammal, Karim, Li, Ange, Liu, Weihua
• Format: Journal Article
• Language: English
• Published: New York IEEE 01.10.2019; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: Cryoforming; Cryogenic temperature; Cryogenics; Energy dissipation; Field effect transistors; High temperature; Logic gates; MOSFET; MOSFETs; ON-resistance; Performance evaluation; planar metal–oxide–semiconductor field-effect transistors (MOSFETs); Semiconductor devices; Short circuits; short-circuit capability; Silicon carbide; switching loss; switching time; temperature; Temperature dependence; Temperature distribution; Threshold voltage; Trench MOSFETs
• ISSN: 0018-9383; 1557-9646; 1557-9646
• DOI: 10.1109/TED.2019.2934507

In this article, the static, dynamic, and short-circuit properties of 1.2-kV commercial 4H-SiC planar and trench gate metal-oxide-semiconductor field-effect transistors (MOSFETs) are compared and analyzed in a wide temperature range from 90 to 493 K. The temperature-dependent specific ON-resistance (<inline-formula> <tex-math notation="LaTeX">{R}_{\text {sp}- \mathrm{\scriptscriptstyle ON}} </tex-math></inline-formula>) and threshold voltage (<inline-formula> <tex-math notation="LaTeX">{V}_{\text {th}} </tex-math></inline-formula>) are analyzed in relation to the density of the interface state. The turn-on rise and turn-off fall times (<inline-formula> <tex-math notation="LaTeX">{T}_{r} </tex-math></inline-formula> and <inline-formula> <tex-math notation="LaTeX">{T}_{f} </tex-math></inline-formula>) and the corresponding energy loss (<inline-formula> <tex-math notation="LaTeX">{E}_{r} </tex-math></inline-formula> and <inline-formula> <tex-math notation="LaTeX">{E}_{f} </tex-math></inline-formula>) are extracted from a double-pulse test from cryogenic to high temperature and analyzed. The short-circuit capability of the two structures is studied at low temperature for the first time. The comprehensive comparison and analysis of the planar and trench gate MOSFET versus temperature in this work show the importance to study applications with SiC MOSFETs in a wide temperature range, especially for the cryogenic temperatures.