Influence of structure geometry on THz emission from Black Silicon surfaces fabricated by reactive ion etching

The influence of structure geometry on THz emission from Black Silicon (BS) surfaces fabricated by reactive ion etching (RIE) has been investigated by a comprehensive study including optical simulations, optical-pump THz probe and THz emission studies. A strong enhancement of THz emission is observe...

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Published inOptics express Vol. 25; no. 6; pp. 6604 - 6620
Main Authors Blumröder, Ulrike, Zilk, Matthias, Hempel, Hannes, Hoyer, Patrick, Pertsch, Thomas, Eichberger, Rainer, Unold, Thomas, Nolte, Stefan
Format Journal Article
LanguageEnglish
Published United States 20.03.2017
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Summary:The influence of structure geometry on THz emission from Black Silicon (BS) surfaces fabricated by reactive ion etching (RIE) has been investigated by a comprehensive study including optical simulations, optical-pump THz probe and THz emission studies. A strong enhancement of THz emission is observed with increasing structure depth, which is mainly related to the increased number of carriers created within the silicon needles and not due to the overall absorption enhancement as previously claimed for silicon nanowires.
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ISSN:1094-4087
1094-4087
DOI:10.1364/OE.25.006604