Total Ionizing Dose Effects in MOS and Low-Dose-Rate-Sensitive Linear-Bipolar Devices

• Published in: IEEE transactions on nuclear science Vol. 60; no. 3; pp. 1706 - 1730
• Main Author: Fleetwood, D. M.
• Format: Journal Article
• Language: English
• Published: IEEE 01.06.2013
• Subjects: Charge carrier processes; Defects; ELDRS; hole traps; hydrogen; Integrated circuit modeling; interface traps; linear bipolar; Logic gates; MOS; MOS capacitors; Radiation effects; Silicon; total ionizing dose

An overview is presented of total ionizing dose (TID) effects in MOS and bipolar devices from a historical perspective, focusing primarily on work presented at the annual IEEE Nuclear and Space Radiation Effects Conference (NSREC). From the founding of the IEEE NSREC in 1964 until ~1976, foundationa...