Total Ionizing Dose Effects in MOS and Low-Dose-Rate-Sensitive Linear-Bipolar Devices

• Published in: IEEE transactions on nuclear science Vol. 60; no. 3; pp. 1706 - 1730
• Main Author: Fleetwood, D. M.
• Format: Journal Article
• Language: English
• Published: IEEE 01.06.2013
• Subjects: Charge carrier processes; Defects; ELDRS; hole traps; hydrogen; Integrated circuit modeling; interface traps; linear bipolar; Logic gates; MOS; MOS capacitors; Radiation effects; Silicon; total ionizing dose
• ISSN: 0018-9499; 1558-1578
• DOI: 10.1109/TNS.2013.2259260

An overview is presented of total ionizing dose (TID) effects in MOS and bipolar devices from a historical perspective, focusing primarily on work presented at the annual IEEE Nuclear and Space Radiation Effects Conference (NSREC). From the founding of the IEEE NSREC in 1964 until ~1976, foundational work led to the discovery of TID effects in MOS devices, the characterization of basic charge transport and trapping processes in SiO 2 , and the development of the first generations of metal-gate radiation-hardened MOS technologies. From ~1977 until ~1985, significant progress was made in the understanding of critical defects and impurities that limit the radiation response of MOS devices. These include O vacancies in SiO 2 , dangling Si bonds at the Si/SiO 2 interface, and hydrogen. In addition, radiation-hardened Si-gate CMOS technologies were developed. From ~1986 until ~1997, a significant focus was placed on understanding postirradiation effects in MOS devices and implementing hardness assurance test methods to qualify devices for use in space systems. Enhanced low-dose-rate sensitivity (ELDRS) was discovered and investigated in linear bipolar devices and integrated circuits. From ~1998 until the present, an increasing focus has been placed on theoretical studies enabled by rapidly advancing computational capabilities, modeling and simulation, effects in ultra-thin oxides and alternative dielectrics to SiO 2 , and in developing a comprehensive model of ELDRS.