APA (7th ed.) Citation

Fleetwood, D. M. (2013). Total Ionizing Dose Effects in MOS and Low-Dose-Rate-Sensitive Linear-Bipolar Devices. IEEE transactions on nuclear science, 60(3), 1706-1730. https://doi.org/10.1109/TNS.2013.2259260

Chicago Style (17th ed.) Citation

Fleetwood, D. M. "Total Ionizing Dose Effects in MOS and Low-Dose-Rate-Sensitive Linear-Bipolar Devices." IEEE Transactions on Nuclear Science 60, no. 3 (2013): 1706-1730. https://doi.org/10.1109/TNS.2013.2259260.

MLA (9th ed.) Citation

Fleetwood, D. M. "Total Ionizing Dose Effects in MOS and Low-Dose-Rate-Sensitive Linear-Bipolar Devices." IEEE Transactions on Nuclear Science, vol. 60, no. 3, 2013, pp. 1706-1730, https://doi.org/10.1109/TNS.2013.2259260.