High-power microwaves response characteristics of silicon and GaAs solar cells
Abstract The high-power microwave (HPM) effect heats solar cells, which is an important component of a satellite. This creates a serious reliability problem and affects the normal operation of a satellite. In this paper, the different HPM response characteristics of two kinds of solar cells are comp...
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Published in | Journal of semiconductors Vol. 43; no. 11; pp. 112701 - 57 |
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Main Authors | , , , , |
Format | Journal Article |
Language | English |
Published |
Chinese Institute of Electronics
01.11.2022
Wide Bandgap Semiconductor Technology Disciplines State Key Laboratory,Xidian University,Xi'an 710071,China |
Subjects | |
Online Access | Get full text |
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Summary: | Abstract
The high-power microwave (HPM) effect heats solar cells, which is an important component of a satellite. This creates a serious reliability problem and affects the normal operation of a satellite. In this paper, the different HPM response characteristics of two kinds of solar cells are comparatively researched by simulation. The results show that there are similarities and differences in hot spot distribution and damage mechanisms between both kinds of solar cell, which are related to the amplitude of HPM. In addition, the duty cycle of repetition frequency contributes more to the temperature accumulation of the solar cells than the carrier frequency. These results will help future research of damage assessment technology, reliability enhancement and the selection of materials for solar cells. |
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ISSN: | 1674-4926 2058-6140 |
DOI: | 10.1088/1674-4926/43/11/112701 |