Buffer-layer-enhanced growth of a single-domain LaB6 (1 0 0) epitaxial thin film on a MgO (1 0 0) substrate via pulsed laser deposition

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Bibliographic Details
Published inJournal of crystal growth Vol. 330; no. 1; pp. 39 - 42
Main Authors KATO, Y, ARAI, H, YOSHIMOTO, M, YAMAUCHI, R, TSUCHIMINE, N, KOBAYASHI, S, SAEKI, K, TAKEZAWA, N, KANEKO, S, MITSUHASHI, M, FUNAKUBO, H
Format Journal Article
LanguageEnglish
Published Amsterdam Elsevier 01.09.2011
Subjects
Condensed matter: structure, mechanical and thermal properties
Cross-disciplinary physics: materials science; rheology
Electron diffraction and scattering
Exact sciences and technology
Laser deposition
Low-energy electron diffraction (leed) and reflection high-energy electron diffraction (rheed)
Materials science
Methods of deposition of films and coatings; film growth and epitaxy
Physics
Structure and morphology; thickness
Structure of solids and liquids; crystallography
Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)
Theory and models of film growth
Thin film structure and morphology
A3. Laser epitaxy
Inorganic compounds
Electrical conductivity
Epitaxy
A1. Crystal structure
Polycrystals
Lanthanum boride
XRD
RHEED
High vacuum
Thin films
Raman scattering
Sapphire
Physical vapor deposition
A3. Physical vapor deposition processes
B1. Nanomaterials
Diffusion
Crystal structure
Buffer layer
Aluminium oxide
Temperature dependence
Epitaxial layers
Pulsed laser deposition
B1. Inorganic compounds
Raman spectroscopy
Growth mechanism
Heteroepitaxy
Laser ablation technique
Nanostructured materials
A3. Migration enhanced epitaxy
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More Information
ISSN:0022-0248
1873-5002
DOI:10.1016/j.jcrysgro.2011.07.001