Electrical characteristics of molybdenum Schottky contacts on n-type GaN

• Published in: Materials science & engineering. B, Solid-state materials for advanced technology Vol. 112; no. 1; pp. 30 - 33
• Main Authors: Ramesh, C.K., Reddy, V. Rajagopal, Choi, Chel-Jong
• Format: Journal Article
• Language: English
• Published: Elsevier B.V 15.09.2004
• Subjects: I– V and C– V techniques; Mo/n-GaN Schottky diode; Schottky barrier height; Schottky barrier height; Mo/n-GaN Schottky diode; I– V and C– V techniques
• ISSN: 0921-5107; 1873-4944
• DOI: 10.1016/j.mseb.2004.05.005

The Schottky barrier heights of molybdenum (Mo) on n-GaN were investigated as a function of annealing temperature by current–voltage ( I– V) and capacitance–voltage ( C– V) techniques. The Schottky barrier height of the as-deposited Mo/n-GaN was found to be 0.81 eV ( I– V) and 1.02 eV ( C– V), respectively. However, both measurements indicate that the barrier height slightly decreases upon annealing at 400 °C for 1 min in nitrogen ambient. The barrier height of Mo/n-GaN Schottky contacts at 400 °C was determined to be 0.74 and 0.92 eV, respectively. Further, an increase in annealing temperature up to 600 °C, decreased the barrier height to 0.56 and 0.73 eV. The Mo Schottky contact was also shown to be fairly stable during annealing at 400 °C.