Nitrogen-Doped ZnSe and ZnSSe Grown by Molecular Beam Epitaxy

Nitrogen-doped ZnSe and lattice-matched ZnSSe were grown on GaAs substrates by MBE using NH 3 gas as a dopant source. The epilayers were characterized by photoluminescence. ZnSe was rather easily doped, and samples in which the acceptor-bound exciton line was a major line in the exciton emission reg...

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Published inJapanese Journal of Applied Physics Vol. 29; no. 2A; p. L221
Main Authors Matsumura, Nobuo, Tsubokura, Mitsutaka, Nakamura, Nobuhiro, Miyagawa, Kazuhiro, Miyanagi, Yoichi, Saraie, Junji
Format Journal Article
LanguageEnglish
Published 01.02.1990
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Summary:Nitrogen-doped ZnSe and lattice-matched ZnSSe were grown on GaAs substrates by MBE using NH 3 gas as a dopant source. The epilayers were characterized by photoluminescence. ZnSe was rather easily doped, and samples in which the acceptor-bound exciton line was a major line in the exciton emission region at 11 K were obtained. ZnSSe was less readily doped with nitrogen at the same NH 3 effective pressure. However, the free-to-acceptor omission at 60 K was stronger in ZnSSe than in ZnSe, due to the effect of lattice matching.
ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.29.L221