Effect of high-temperature annealing on lanthanum aluminate thin films grown by ALD on Si(1 0 0)

• Published in: Microelectronic engineering Vol. 86; no. 7; pp. 1696 - 1699
• Main Authors: Congedo, G., Spiga, S., Lamagna, L., Lamperti, A., Lebedinskii, Yu, Matveyev, Yu, Zenkevich, A., Chernykh, P., Fanciulli, M.
• Format: Journal Article
• Language: English
• Published: Elsevier B.V 01.07.2009
• Subjects: Atomic layer deposition; High- κ dielectrics; Lanthanum aluminate; Atomic layer deposition; High- κ dielectrics; Lanthanum aluminate
• ISSN: 0167-9317; 1873-5568
• DOI: 10.1016/j.mee.2009.03.072

Amorphous lanthanum aluminate thin films were deposited by atomic layer deposition on Si(1 0 0) using La( iPrCp) 3, Al(CH 3) 3 and O 3 species. The effects of post-deposition rapid thermal annealing on the physical and electrical properties of the films were investigated. High-temperature annealing at 900 °C in N 2 atmosphere leads to the formation of amorphous La-aluminosilicate due to Si diffusion from the substrate. The annealed oxide exhibits a uniform composition through the film thickness, a large band gap of 7.0 ± 0.1 eV, and relatively high dielectric constant ( κ) of 18 ± 1.