Optoelectronical properties of indium sulfide thin films prepared by spray pyrolysis for photovoltaic applications

• Published in: Thin solid films Vol. 480; no. Complete; pp. 133 - 137
• Main Authors: Calixto-Rodriguez, M., Tiburcio-Silver, A., Ortiz, A., Sanchez-Juarez, A.
• Format: Journal Article
• Language: English
• Published: Elsevier B.V 01.06.2005
• Subjects: Indium sulfide; Solar cell; Spray pyrolysis; Solar cell; Indium sulfide; Spray pyrolysis
• ISSN: 0040-6090; 1879-2731
• DOI: 10.1016/j.tsf.2004.11.046

Indium sulfide (In 2S 3) thin films have been prepared by the spray pyrolysis (SP) technique using indium acetate and N- N dimethyl thiourea as precursor compounds. Samples prepared at different temperatures and atomic ratio of In to S in the starting solution, (In/S) sol, have been characterized using several techniques. X-ray diffraction studies have shown that the preparation temperature ( T p) affects the crystallinity of the deposited materials as well as the optoelectronic properties. For (In/S) sol=1/8, the optical band gap ( E g) increases from 2.2 up to 2.67 eV when T p increases from 250 up to 450 °C. For (In/S) sol=1 and T p=450 °C, the deposited material shows n-type electrical conductivity with a dark value of 1 (Ωcm) −1, and E g=2.04 eV. The In 2S 3 thin films prepared under these conditions have a big potential use as a window material for photovoltaic heterojunction devices.