Nanostructured gamma-alumina formed during anodic bonding of Al/Glass

Tree-like nanostructured γ-Al 2O 3 tends to form at the interface of Al/glass during anodic bonding. The γ-Al 2O 3 trees possess a distorted lattice and contain crystallographic defects including grain boundaries, twins, stacking faults, dislocation loops, and edge dislocations. They grow into the g...

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Bibliographic Details
Published inSolid state ionics Vol. 178; no. 3; pp. 179 - 185
Main Authors Xing, Qingfeng, Sasaki, Gen
Format Journal Article
LanguageEnglish
Published Elsevier B.V 01.02.2007
Subjects
Aluminum
Anodic bonding
Glass
Oxidation
TEM
Oxidation
Anodic bonding
Aluminum
TEM
Glass
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Summary:Tree-like nanostructured γ-Al 2O 3 tends to form at the interface of Al/glass during anodic bonding. The γ-Al 2O 3 trees possess a distorted lattice and contain crystallographic defects including grain boundaries, twins, stacking faults, dislocation loops, and edge dislocations. They grow into the glass to a much greater degree than into the aluminum. Between the trees are aluminum-enriched amorphous regions. The Al/γ-Al 2O 3 interface is sharp and is free of an amorphous layer. The diffusion of aluminum into the glass does not lead to γ-Al 2O 3 trees if low voltages or short bonding durations are employed.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0167-2738
1872-7689
DOI:10.1016/j.ssi.2006.12.012