Electronic structure of memory traps in silicon nitride

From experiments on photoluminescence in Si 3N 4 the polaron energy of 1.4 eV was determined. This value is in agreement with the energy of thermal ionization determined from electron and hole transport. Quantum-chemical simulation showed that Si–Si bond is able to capture holes and electrons in Si...

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Published inMicroelectronic engineering Vol. 86; no. 7; pp. 1866 - 1869
Main Authors Gritsenko, V.A., Nekrashevich, S.S., Vasilev, V.V., Shaposhnikov, A.V.
Format Journal Article
LanguageEnglish
Published Elsevier B.V 01.07.2009
Subjects
Defects
Silicon nitride
Traps
Traps
Silicon nitride
Defects
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Summary:From experiments on photoluminescence in Si 3N 4 the polaron energy of 1.4 eV was determined. This value is in agreement with the energy of thermal ionization determined from electron and hole transport. Quantum-chemical simulation showed that Si–Si bond is able to capture holes and electrons in Si 3N 4.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0167-9317
1873-5568
DOI:10.1016/j.mee.2009.03.093