Recent developments in the IGNITE project on front-end design in CMOS 28-nm technology

Abstract The IGNITE project (INFN Ground-up INITiative-on micro-Electronics developments) is developing solutions on integrated micro-systems aimed at the next generation of high-luminosity experiment at the LHC. A test ASIC, designed in CMOS 28-nm technology and named Ignite-0 , has been submitted...

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Published inJournal of instrumentation Vol. 19; no. 1; p. C01040
Main Authors Cadeddu, Sandro, Cossu, Gian Matteo, Frontini, Luca, Lai, Adriano, Liberali, Valentino, Piccolo, Lorenzo, Stabile, Alberto
Format Journal Article
LanguageEnglish
Published IOP Publishing 01.01.2024
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Summary:Abstract The IGNITE project (INFN Ground-up INITiative-on micro-Electronics developments) is developing solutions on integrated micro-systems aimed at the next generation of high-luminosity experiment at the LHC. A test ASIC, designed in CMOS 28-nm technology and named Ignite-0 , has been submitted for fabrication. It integrates circuital solutions suitable for pixels with timing having a pitch ranging from 45 to 55 µm. The present paper describes the criteria used in the design choices, and the expected ASIC performance as output from post-layout simulations. Perspectives on subsequent design work on 4D-tracking devices following the Ignite-0 development are also briefly described.
ISSN:1748-0221
1748-0221
DOI:10.1088/1748-0221/19/01/C01040