Influence of Environmental Conditions on Electrical Stability of Pentacene Thin-film Transistors with Cross-linked Poly(4-vinylphenol-co-methyl methacrylate) Gate Dielectric Layer

Gate-bias stress causes changes in the electrical stability of thin-film transistors (TFTs), and this can degrade the device performance. This research highlights the effects of environmental conditions on the electrical stability of pentacene TFTs in which cross-linked poly(4vinylphenol-co-methyl m...

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Bibliographic Details
Published inSensors and materials Vol. 32; no. 10; p. 3373
Main Authors Chintalapalli, Jyothi, Ndikumana, Joel, Baang, Sungkeun, Park, Jaehoon
Format Journal Article
LanguageEnglish
Published Tokyo MYU Scientific Publishing Division 30.10.2020
Subjects
Bias
Crosslinking
Polymethyl methacrylate
Resistance
Semiconductor devices
Stability
Thin film transistors
Threshold voltage
Transistors
Water chemistry
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Summary:Gate-bias stress causes changes in the electrical stability of thin-film transistors (TFTs), and this can degrade the device performance. This research highlights the effects of environmental conditions on the electrical stability of pentacene TFTs in which cross-linked poly(4vinylphenol-co-methyl methacrylate) (PVP-co-PMMA) was utilized as a gate dielectric layer. Under negative gate-bias stress, the fabricated TFTs exposed to ambient air showed a positive threshold voltage shift, whereas the devices under vacuum exhibited a negative threshold voltage shift. Furthermore, consecutive on/off switching operation of pentacene TFTs under ambient air induced an increase in the on-state drain current. These results are explained through the interaction between water molecules and PVP-co-PMMA, which causes the accumulation of holes in the TFT channel region having higher conductance.
ISSN:0914-4935
DOI:10.18494/SAM.2020.2776