Thermal desorption study on silicon surfaces during fluorine removal process with atomic deuterium exposure

• Published in: Japanese Journal of Applied Physics Vol. 35; no. 3; pp. 1846 - 1849
• Main Authors: SAITO, Y, KUBOTA, T
• Format: Journal Article
• Language: English
• Published: Tokyo Japanese journal of applied physics 01.03.1996
• Subjects: Chemistry; Exact sciences and technology; General and physical chemistry; Solid-liquid interface; Surface physical chemistry; Liquid solid interface; Liquid solid adsorption; Hydrogen; Liquid solid desorption; Atoms; Temperature effect; Thermodesorption; Inorganic adsorbent; Experimental study; Hydrofluoric acid; Silicon; Kinetics; Deuterium Compounds; Auger electron spectrometry; Passivation; Crystalline structure
• ISSN: 0021-4922; 1347-4065
• DOI: 10.1143/jjap.35.1846

An accelerated desorption of fluorine adsorbates from silicon surfaces is induced by atomic deuterium (or hydrogen) exposure at low substrate temperature. The reaction processes have been investigated with in situ Auger analysis and thermally stimulated desorption spectroscopy (TDS) measurements. The experimental results of both fluorine decay and TDS spectra indicate that two kinds of the reaction products including SiDF molecules desorb from the surface in the initial stage of the reaction between the atomic deuterium and the fluorinated silicon. With the decrease in fluorine coverage, SiDF molecules desorb as the main reaction products. A deuterium-passivated silicon surface is obtained by atomic deuterium treatment at 200° C for 30 min from the fluorinated surface.