Ion Beam Modification for Si Photonics

• Published in: Physics (Online) Vol. 4; no. 2; pp. 383 - 393
• Main Authors: Goncharova, Lyudmila V., Simpson, Peter J.
• Format: Journal Article
• Language: English
• Published: Basel MDPI AG 01.06.2022
• Subjects: Alloys; Annealing; Chemical vapor deposition; CMOS; Defects; Emitters; Energy; Germanium; ion beam implantation; Ion beams; Ion implantation; Lasers; Light; Light emission; Molecular beam epitaxy; Optical activity; Photonics; Quantum dots; R&D; Rare earth elements; Research & development; Semiconductor devices; Semiconductor doping; Sensors; Short wave radiation; short-wave infrared detectors; Si photonics; Silicon; Silicon oxides; Thin films; Transplants & implants

Ion implantation has played a significant role in semiconductor device fabrication and is growing in significance in the fabrication of Si photonic devices. In this paper, recent progress in the growth and characterization of Si and Ge quantum dots (QDs) for photonic light-emitting devices is review...