Ion Beam Modification for Si Photonics

Ion implantation has played a significant role in semiconductor device fabrication and is growing in significance in the fabrication of Si photonic devices. In this paper, recent progress in the growth and characterization of Si and Ge quantum dots (QDs) for photonic light-emitting devices is review...

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Bibliographic Details
Published inPhysics (Online) Vol. 4; no. 2; pp. 383 - 393
Main Authors Goncharova, Lyudmila V., Simpson, Peter J.
Format Journal Article
LanguageEnglish
Published Basel MDPI AG 01.06.2022
Subjects
Alloys
Annealing
Chemical vapor deposition
CMOS
Defects
Emitters
Energy
Germanium
ion beam implantation
Ion beams
Ion implantation
Lasers
Light
Light emission
Molecular beam epitaxy
Optical activity
Photonics
Quantum dots
R&D
Rare earth elements
Research & development
Semiconductor devices
Semiconductor doping
Sensors
Short wave radiation
short-wave infrared detectors
Si photonics
Silicon
Silicon oxides
Thin films
Transplants & implants
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Summary:Ion implantation has played a significant role in semiconductor device fabrication and is growing in significance in the fabrication of Si photonic devices. In this paper, recent progress in the growth and characterization of Si and Ge quantum dots (QDs) for photonic light-emitting devices is reviewed, with a focus on ion implantation as a synthetic tool. Light emissions from Si and Ge QDs are compared with emissions from other optically active centers, such as defects in silicon oxide and other thin film materials, as well as rare-earth light emitters. Detection of light in silicon photonics is performed via the integration of germanium and other elements into detector structures, which can also be achieved by ion implantation. Novel techniques to grow SiGe- and SiGeSn-on-Si structure are described along with their application as detectors for operation in the short-wave infrared range.
ISSN:2624-8174
2624-8174
DOI:10.3390/physics4020025