Inverted Organic Photodetectors With ZnO Electron-Collecting Buffer Layers and Polymer Bulk Heterojunction Active Layers

We report inverted-type organic photodetectors with zinc oxide (ZnO) electron-collecting buffer layers and polymer:fullerene bulk heterojunction active layers. A visible light was detected by the inverted organic photodetectors when a background UV light was ON, whereas no photocurrent signal was me...

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Bibliographic Details
Published inIEEE journal of selected topics in quantum electronics Vol. 20; no. 6; pp. 130 - 136
Main Authors Jeong, Jaehoon, Nam, Sungho, Kim, Hwajeong, Kim, Youngkyoo
Format Journal Article
LanguageEnglish
Published New York IEEE 01.11.2014
The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subjects
Buffer layers
Current measurement
Devices
Heterojunctions
Lighting
Photoconductivity
Photocurrent
Photodetectors
Photoelectric effect
Quantum electronics
Voltage measurement
Wavelength measurement
Zinc oxide
Organic photodetector (OPD)
ZnO
UV-visible detection
P3HT/PC61BM
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Summary:We report inverted-type organic photodetectors with zinc oxide (ZnO) electron-collecting buffer layers and polymer:fullerene bulk heterojunction active layers. A visible light was detected by the inverted organic photodetectors when a background UV light was ON, whereas no photocurrent signal was measured for visible lights without the background UV light. Interestingly, UV lights solely were successfully detected without any surrounding UV light. The present devices exhibited fast and stable photo-responses under modulated or continuous UV-visible lights.
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ISSN:1077-260X
1558-4542
DOI:10.1109/JSTQE.2014.2354649