Cryogenic nanoelectromechanical switch enabled by Bi2Se3 nanoribbons

• Published in: Materials science & engineering. B, Solid-state materials for advanced technology Vol. 275; p. 115510
• Main Authors: Jasulaneca, Liga, Meija, Raimonds, Kauranens, Edijs, Sondors, Raitis, Andzane, Jana, Rimsa, Roberts, Mozolevskis, Gatis, Erts, Donats
• Format: Journal Article
• Language: English
• Published: Lausanne Elsevier B.V 01.01.2022; Elsevier BV
• Subjects: Bi2Se3; Cryogenic; Cryogenic engineering; Cryogenic temperature; Memory devices; Nanoelectromechanical switch; Nanoelectromechanical system; Nanoelectromechanical systems; Nanoribbon; Nanoribbons; Quantum computers; R&D; Research & development; Space probes; Switches; Cryogenic; Bi2Se3; Nanoribbon; Nanoelectromechanical switch; Nanoelectromechanical system
• ISSN: 0921-5107; 1873-4944
• DOI: 10.1016/j.mseb.2021.115510

•Cryogenic nanoscale electromechanical switching is demonstrated for the first time.•Bi2Se3 nanoribbons are used as active elements for cryogenic switching.•Reversible switching is achieved at temperatures as low as 5 K.•Volatile and non-volatile nanoelectromechanical switching is implemented.•Demonstrated switch-ON voltages are as low as 7.8 V. Nanoelectromechanical (NEM) switches are potential candidates for memory and logic devices for low standby-current and harsh environment applications. Cryogenic operation of these devices would allow to use them, e.g., in space probes and in conjunction with quantum computers. Herein, it is demonstrated that cryogenic application requirements such as good flexibility and conductivity are satisfied by using Bi2Se3 nanoribbons as active elements in NEM switches. Experimental proof of principle NEM switching at temperatures as low as 5 K is achieved in volatile and non-volatile reversible regimes, exhibiting distinct ON and OFF states, backed by theoretical modelling. The results open new avenues for research and development of NEM systems at cryogenic temperatures.