Losses and group index dispersion in insulator-on-silicon-on-insulator ridge waveguides
We present polarization-dependent optical transmission properties of a completely symmetric silicon-on-insulator (SOI) microphotonic material system. In contrast to typical SOI based photonic materials, here an insulator-on-silicon-on-insulator (IOSOI) material system has been fabricated. This symme...
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Published in | Optics express Vol. 18; no. 5; pp. 4590 - 4600 |
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Main Authors | , |
Format | Journal Article |
Language | English |
Published |
United States
01.03.2010
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Online Access | Get full text |
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Summary: | We present polarization-dependent optical transmission properties of a completely symmetric silicon-on-insulator (SOI) microphotonic material system. In contrast to typical SOI based photonic materials, here an insulator-on-silicon-on-insulator (IOSOI) material system has been fabricated. This symmetric structure exhibits average losses between 1510 and 1630 nm of around 0.5 dB/mm for TE and 0.3 dB/mm for TM-polarization. The good transmission for TM-polarization can be explained by the thick insulting cladding layer of 3 microm thickness. Moreover, group index dispersion diagrams are presented and discussed for both polarizations. |
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Bibliography: | ObjectType-Article-1 SourceType-Scholarly Journals-1 ObjectType-Feature-2 content type line 23 |
ISSN: | 1094-4087 1094-4087 |
DOI: | 10.1364/OE.18.004590 |