Simple method for ion current measurement at RF biased electrode

Samples are usually placed on an RF bias electrode for an inductively coupled plasma device. The RF current and voltage waveforms at the bias electrode were measured. The current through the stray capacitance was cancelled by an LC cancel circuit. Only the sheath impedance at the bias electrode was...

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Bibliographic Details
Published inThin solid films Vol. 506; no. Complete; pp. 683 - 687
Main Authors Kawata, Hiroaki, Yasuda, Masaaki, Hirai, Yoshihiko
Format Journal Article
LanguageEnglish
Published Elsevier B.V 26.05.2006
Subjects
Conduction current
Inductively coupled plasma
Ion current
Plasma impedance
RF bias
Ion current
Inductively coupled plasma
Conduction current
Plasma impedance
RF bias
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Summary:Samples are usually placed on an RF bias electrode for an inductively coupled plasma device. The RF current and voltage waveforms at the bias electrode were measured. The current through the stray capacitance was cancelled by an LC cancel circuit. Only the sheath impedance at the bias electrode was considered as the equivalent circuit. The RF voltage greatly depended on the RF power, but the RF current slightly depended on the RF power. The conduction current could be related to the plasma density. The incident ion current to the bias electrode was given by the half value of the amplitude of the conduction current. The obtained incident ion current agreed with those obtained from different methods.
Bibliography:SourceType-Scholarly Journals-2
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ISSN:0040-6090
1879-2731
DOI:10.1016/j.tsf.2005.08.116