Growth of chromium carbide capped–carbon nanotip using bias-assisted microwave plasma chemical vapor deposition

• Published in: Thin solid films Vol. 469; no. Complete; pp. 131 - 134
• Main Authors: Hsu, C.H., Shi, S.C., Chen, C.F.
• Format: Journal Article
• Language: English
• Published: Elsevier B.V 22.12.2004
• Subjects: Bias; Carbon nanotip; Chromium carbide; Microwave plasma chemical vapor deposition; Carbon nanotip; Chromium carbide; Microwave plasma chemical vapor deposition; Bias
• ISSN: 0040-6090; 1879-2731
• DOI: 10.1016/j.tsf.2004.08.072

Chromium carbide capped–carbon nanotips were synthesized using bias-assisted microwave plasma chemical vapor deposition. Such a material grew up to several hundreds of nanometer long and tens of nanometer in diameter. The applied bias voltage is a significant parameter in the growth process whereas the higher bias voltage is effective in increasing the growth rate. However, the higher bias voltage also contributes to a rapid formation of chromium carbide which leads to a shorter length of carbon nanotip at the same time. Higher ion energies also vary the tip diameter due to strong ion bombardment which is a competitor to the deposition process. Our investigations revealed that the growth of chromium carbide capped–carbon nanotips reaches a limit due to the full carburization of chromium.