TEM Observation of Defects Induced by Ni Contamination on a Si(100) Surface

The behavior of Si(100) surface defects induced by intentional Ni contamination was studied by means of etch-pit observation and transmission electron microscopy. After annealing at 1150°C for 1 hour in N 2 atmosphere, shallow pits (SP) were observed only on the surface of the wafer. These SP were t...

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Published inJapanese Journal of Applied Physics Vol. 28; no. 3A; p. L333
Main Authors Sadamitsu, Shinsuke, Sano, Masakazu, Hourai, Masataka, Sumita, Shigeo, Fujino, Nobukatsu, Shiraiwa, Toshio
Format Journal Article
LanguageEnglish
Published 01.03.1989
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Summary:The behavior of Si(100) surface defects induced by intentional Ni contamination was studied by means of etch-pit observation and transmission electron microscopy. After annealing at 1150°C for 1 hour in N 2 atmosphere, shallow pits (SP) were observed only on the surface of the wafer. These SP were thought to be attributable to NiSi 2 -type silicides formed on the surface by the selected area diffraction pattern. During the additionl thermal oxidation, oxidation-induced stacking faults (OSF) were always formed at each of the large SP but not always at small ones.
ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.28.L333