Growth of GaN on Metallic Compound Graphite Substrate Using Hydride Vapor Phase Epitaxy

In this paper, the GaN poly crystal was grown by hydride vapor phase epitaxy at 1090 °C on the metallic compound graphite substrate with good heat dissipation. The coefficient of thermal expansion of the metallic compound graphite substrate is 6.2 μm/(m$\cdot$K). The heat conductivity is 150 W/(m$\c...

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Published inJapanese Journal of Applied Physics Vol. 52; no. 11; pp. 11NG03 - 11NG03-4
Main Authors Kim, Ji Young, Lee, Gang Seok, Jung, Se-Gyo, Park, Min Ah, Shin, Min Jeong, Yi, Sam Nyung, Yang, Min, Ahn, Hyung Soo, Yu, Young Moon, Kim, Suck-Whan, Lee, Hyo Suk, Kang, Hee Shin, Jeon, Hun Soo, Sawaki, Nobuhiko
Format Journal Article
LanguageEnglish
Published The Japan Society of Applied Physics 01.11.2013
Subjects
Crystals
Gallium nitrides
Graphite
Hydrides
Metallic compounds
Scanning electron microscopy
Thermal conductivity
Vapor phase epitaxy
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Summary:In this paper, the GaN poly crystal was grown by hydride vapor phase epitaxy at 1090 °C on the metallic compound graphite substrate with good heat dissipation. The coefficient of thermal expansion of the metallic compound graphite substrate is 6.2 μm/(m$\cdot$K). The heat conductivity is 150 W/(m$\cdot$K), and specific gravity is 3.1. The metallic compound graphite substrate was gained higher thermal conductivity more than the sapphire substrate through by injecting the nonferrous metal in the porosity carbon graphite base. The GaN poly crystal grown along the [0001] $c$-axis by hydride vapor phase epitaxy was observed on the metallic compound graphite substrate through the scanning electron microscope and energy dispersive spectroscopy. And electrical characteristic of substrate with each different condition was investigated by Hall Effect measurement.
Bibliography:(Color online) Schematic of HVPE system. SEM image of copper rich area as a seed for growth of GaN crystal (a), (b) and top view of substrate after growth (c) and magnified top view of substrate after growth (d). (Color online) EDS results of initial seed (a), cross section of metallic compound graphite substrate (b), grown GaN hexagonal structure (c), each color of EDS result from graphite substrate to near the GaN hexagonal structure (d), and the whole area of graphite substrate (e).
ObjectType-Article-1
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content type line 23
ISSN:0021-4922
1347-4065
DOI:10.7567/JJAP.52.11NG03