Characterization of ion implanted layer using ion-induced acoustic signal

The acoustic signal induced by an intensity modulated 3 MeV Si 2+ ion beam was observed by both post-process and in-process measurements to investigate the influence of the 3 MeV Si ion implanted layer into Al plate on the ion acoustic signal (IA signal). A phase difference between IA signals at the...

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Bibliographic Details
Published inJapanese Journal of Applied Physics Vol. 29; no. S1; pp. 13 - 15
Main Authors OGISO, H, NAKANO, S, NAGATA, Y, YAMANAKA, K, KODA, T
Format Conference Proceeding Journal Article
LanguageEnglish
Published Tokyo Japanese journal of applied physics 1990
Subjects
Applied sciences
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Electron and ion emission by liquids and solids; impact phenomena
Exact sciences and technology
Impact phenomena (including electron spectra and sputtering)
Metals. Metallurgy
Other electron-impact emission phenomena
Physics
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Summary:The acoustic signal induced by an intensity modulated 3 MeV Si 2+ ion beam was observed by both post-process and in-process measurements to investigate the influence of the 3 MeV Si ion implanted layer into Al plate on the ion acoustic signal (IA signal). A phase difference between IA signals at the implanted region and unimplanted region was found. Therefore, the phase of IA signal can be applied to characterization of the ion implanted layer. Influence on the amplitude was not clear, however so this seems hard to use for the characterization.
ISSN:0021-4922
1347-4065
DOI:10.7567/jjaps.29s1.13