Synaptic devices based on gate-all-around InAs nanowire field effect transistor

In this paper, we proposed a gate-all-around InAs nanowire field effect transistor (GAA InAs NW FET) that can simulate synaptic behaviors such as short-term potentiation (STP) and long-term potentiation (LTP). The native oxide layer (In 2 O 3 ) on the surface of InAs NW serves as a charge trapping l...

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Bibliographic Details
Published inJournal of physics. Conference series Vol. 2370; no. 1; pp. 12015 - 12019
Main Authors Luo, Wei, Zha, Chaofei, Zhang, Xia, Yan, Xin, Ren, Xiaomin
Format Journal Article
LanguageEnglish
Published Bristol IOP Publishing 01.11.2022
Subjects
Field effect transistors
Indium arsenides
Indium oxides
Nanowires
Physics
Semiconductor devices
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Summary:In this paper, we proposed a gate-all-around InAs nanowire field effect transistor (GAA InAs NW FET) that can simulate synaptic behaviors such as short-term potentiation (STP) and long-term potentiation (LTP). The native oxide layer (In 2 O 3 ) on the surface of InAs NW serves as a charge trapping layer for storing information. The transition from short-term potentiation (STP) to long-term potentiation (LTP) can be achieved by properly adjusting the gate voltage. Due to enhanced gate controllability, the GAA InAs NW FETs are expected to be widely used and promising in neuromorphic systems and networks.
ISSN:1742-6588
1742-6596
DOI:10.1088/1742-6596/2370/1/012015