Interface mechanical behavior of gold alloy wire bonding

• Published in: Journal of physics. Conference series Vol. 1907; no. 1; pp. 12021 - 12025
• Main Authors: Xie, Shuang, Lin, Pengrong, Yao, Quanbin
• Format: Journal Article
• Language: English
• Published: Bristol IOP Publishing 01.05.2021
• Subjects: Aluminum compounds; Electrical resistivity; Gold; Gold base alloys; Mechanical properties; Military applications; Oxidation resistance; Packaging; Palladium; Physics; Reliability analysis; Semiconductors; Thermal conductivity; Thermal resistance; Wire
• ISSN: 1742-6588; 1742-6596
• DOI: 10.1088/1742-6596/1907/1/012021

Abstract The connection between the internal chip and external pins of the semiconductor package and the connection between the chip play an important role in establishing the electrical connection between the chip and the outside and ensuring the input/output between the chip and the outside. It is the key to the entire subsequent packaging process. Wire bonding has a dominant position in connection methods due to its simple process, low cost, and application of a variety of packaging forms. In high-reliability fields such as military and aerospace applications, bonding wires are usually used as chip interconnect materials. The bonding wires have good electrical conductivity, thermal conductivity, and oxidation resistance, but there are some reliability problems in bonding due to the production of Au-Al compounds. In this paper, Al element is used to modify the bonding alloy wire innovatively, the mechanical properties of Au-Al and Au-Pd system bonding points and the growth and evolution of IMC are studied, and the influence of Al and Pd elements on the reliability of bonding points is evaluated.