Electrical properties of α-Ir2O3/α-Ga2O3 pn heterojunction diode and band alignment of the heterostructure

• Published in: Applied physics letters Vol. 113; no. 21
• Main Authors: Kan, Shin-ichi, Takemoto, Shu, Kaneko, Kentaro, Takahashi, Isao, Sugimoto, Masahiro, Shinohe, Takashi, Fujita, Shizuo
• Format: Journal Article
• Language: English
• Published: Melville American Institute of Physics 19.11.2018
• Subjects: Alignment; Applied physics; Conduction bands; Corundum; Current voltage characteristics; Diodes; Electric potential; Electrical conduction; Electrical properties; Electrical resistivity; Electrons; Exports; Gallium oxides; Heterojunctions; Heterostructures; Iridium; Offsets; Photoelectric emission; X ray spectra

Corundum-structured iridium oxide (α-Ir2O3), showing p-type conductivity, is a strong candidate to form high-quality pn heterojunctions with α-Ga2O3. We fabricated α-Ir2O3/α-Ga2O3 pn heterojunction diodes and they showed well-defined rectifying current-voltage (I-V) characteristics with the turn-on...