Electrical properties of α-Ir2O3/α-Ga2O3 pn heterojunction diode and band alignment of the heterostructure

Corundum-structured iridium oxide (α-Ir2O3), showing p-type conductivity, is a strong candidate to form high-quality pn heterojunctions with α-Ga2O3. We fabricated α-Ir2O3/α-Ga2O3 pn heterojunction diodes and they showed well-defined rectifying current-voltage (I-V) characteristics with the turn-on...

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Bibliographic Details
Published inApplied physics letters Vol. 113; no. 21
Main Authors Kan, Shin-ichi, Takemoto, Shu, Kaneko, Kentaro, Takahashi, Isao, Sugimoto, Masahiro, Shinohe, Takashi, Fujita, Shizuo
Format Journal Article
LanguageEnglish
Published Melville American Institute of Physics 19.11.2018
Subjects
Alignment
Applied physics
Conduction bands
Corundum
Current voltage characteristics
Diodes
Electric potential
Electrical conduction
Electrical properties
Electrical resistivity
Electrons
Exports
Gallium oxides
Heterojunctions
Heterostructures
Iridium
Offsets
Photoelectric emission
X ray spectra
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Summary:Corundum-structured iridium oxide (α-Ir2O3), showing p-type conductivity, is a strong candidate to form high-quality pn heterojunctions with α-Ga2O3. We fabricated α-Ir2O3/α-Ga2O3 pn heterojunction diodes and they showed well-defined rectifying current-voltage (I-V) characteristics with the turn-on voltage of about 2.0 V. The band alignment at the α-Ir2O3/α-Ga2O3 interface was investigated by X-ray photoemission spectroscopy, revealing a staggered-gap (type-II) with the valence- and conduction-band offsets of 3.34 eV and 1.04 eV, respectively. The total barrier height for electrons was about 2.4 eV, which reasonably agreed with the turn-on voltage in the I-V characteristics. This means that electrons are mainly attributed to electrical conduction around the turn-on voltage.
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content type line 14
ISSN:0003-6951
1077-3118
DOI:10.1063/1.5054054