Electrical properties of α-Ir2O3/α-Ga2O3 pn heterojunction diode and band alignment of the heterostructure

Corundum-structured iridium oxide (α-Ir2O3), showing p-type conductivity, is a strong candidate to form high-quality pn heterojunctions with α-Ga2O3. We fabricated α-Ir2O3/α-Ga2O3 pn heterojunction diodes and they showed well-defined rectifying current-voltage (I-V) characteristics with the turn-on...

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Published inApplied physics letters Vol. 113; no. 21
Main Authors Kan, Shin-ichi, Takemoto, Shu, Kaneko, Kentaro, Takahashi, Isao, Sugimoto, Masahiro, Shinohe, Takashi, Fujita, Shizuo
Format Journal Article
LanguageEnglish
Published Melville American Institute of Physics 19.11.2018
Subjects
Alignment
Applied physics
Conduction bands
Corundum
Current voltage characteristics
Diodes
Electric potential
Electrical conduction
Electrical properties
Electrical resistivity
Electrons
Exports
Gallium oxides
Heterojunctions
Heterostructures
Iridium
Offsets
Photoelectric emission
X ray spectra
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Abstract Corundum-structured iridium oxide (α-Ir2O3), showing p-type conductivity, is a strong candidate to form high-quality pn heterojunctions with α-Ga2O3. We fabricated α-Ir2O3/α-Ga2O3 pn heterojunction diodes and they showed well-defined rectifying current-voltage (I-V) characteristics with the turn-on voltage of about 2.0 V. The band alignment at the α-Ir2O3/α-Ga2O3 interface was investigated by X-ray photoemission spectroscopy, revealing a staggered-gap (type-II) with the valence- and conduction-band offsets of 3.34 eV and 1.04 eV, respectively. The total barrier height for electrons was about 2.4 eV, which reasonably agreed with the turn-on voltage in the I-V characteristics. This means that electrons are mainly attributed to electrical conduction around the turn-on voltage.
AbstractList Corundum-structured iridium oxide (α-Ir2O3), showing p-type conductivity, is a strong candidate to form high-quality pn heterojunctions with α-Ga2O3. We fabricated α-Ir2O3/α-Ga2O3 pn heterojunction diodes and they showed well-defined rectifying current-voltage (I-V) characteristics with the turn-on voltage of about 2.0 V. The band alignment at the α-Ir2O3/α-Ga2O3 interface was investigated by X-ray photoemission spectroscopy, revealing a staggered-gap (type-II) with the valence- and conduction-band offsets of 3.34 eV and 1.04 eV, respectively. The total barrier height for electrons was about 2.4 eV, which reasonably agreed with the turn-on voltage in the I-V characteristics. This means that electrons are mainly attributed to electrical conduction around the turn-on voltage.
Author Takemoto, Shu
Kaneko, Kentaro
Kan, Shin-ichi
Sugimoto, Masahiro
Shinohe, Takashi
Takahashi, Isao
Fujita, Shizuo
Author_xml – sequence: 1
  givenname: Shin-ichi
  surname: Kan
  fullname: Kan, Shin-ichi
  organization: Department of Electronic Science and Engineering, Kyoto University, Katsura
– sequence: 2
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  surname: Takemoto
  fullname: Takemoto, Shu
  organization: Department of Electronic Science and Engineering, Kyoto University, Katsura
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  givenname: Kentaro
  surname: Kaneko
  fullname: Kaneko, Kentaro
  organization: 3FLOSFIA INC., Kyo-dai-Katsura Venture Plaza, Katsura, Nishikyo-ku, Kyoto 615-8245, Japan
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  givenname: Isao
  surname: Takahashi
  fullname: Takahashi, Isao
  organization: FLOSFIA INC., Kyo-dai-Katsura Venture Plaza, Katsura
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  givenname: Masahiro
  surname: Sugimoto
  fullname: Sugimoto, Masahiro
  organization: FLOSFIA INC., Kyo-dai-Katsura Venture Plaza, Katsura
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  givenname: Takashi
  surname: Shinohe
  fullname: Shinohe, Takashi
  organization: FLOSFIA INC., Kyo-dai-Katsura Venture Plaza, Katsura
– sequence: 7
  givenname: Shizuo
  surname: Fujita
  fullname: Fujita, Shizuo
  organization: 3FLOSFIA INC., Kyo-dai-Katsura Venture Plaza, Katsura, Nishikyo-ku, Kyoto 615-8245, Japan
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Snippet Corundum-structured iridium oxide (α-Ir2O3), showing p-type conductivity, is a strong candidate to form high-quality pn heterojunctions with α-Ga2O3. We...
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SubjectTerms Alignment
Applied physics
Conduction bands
Corundum
Current voltage characteristics
Diodes
Electric potential
Electrical conduction
Electrical properties
Electrical resistivity
Electrons
Exports
Gallium oxides
Heterojunctions
Heterostructures
Iridium
Offsets
Photoelectric emission
X ray spectra
Title Electrical properties of α-Ir2O3/α-Ga2O3 pn heterojunction diode and band alignment of the heterostructure
URI http://dx.doi.org/10.1063/1.5054054
https://www.proquest.com/docview/2136286196
Volume 113
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