APA (7th ed.) Citation

Kan, S., Takemoto, S., Kaneko, K., Takahashi, I., Sugimoto, M., Shinohe, T., & Fujita, S. (2018). Electrical properties of α-Ir2O3/α-Ga2O3 pn heterojunction diode and band alignment of the heterostructure. Applied physics letters, 113(21), . https://doi.org/10.1063/1.5054054

Chicago Style (17th ed.) Citation

Kan, Shin-ichi, Shu Takemoto, Kentaro Kaneko, Isao Takahashi, Masahiro Sugimoto, Takashi Shinohe, and Shizuo Fujita. "Electrical Properties of α-Ir2O3/α-Ga2O3 Pn Heterojunction Diode and Band Alignment of the Heterostructure." Applied Physics Letters 113, no. 21 (2018). https://doi.org/10.1063/1.5054054.

MLA (9th ed.) Citation

Kan, Shin-ichi, et al. "Electrical Properties of α-Ir2O3/α-Ga2O3 Pn Heterojunction Diode and Band Alignment of the Heterostructure." Applied Physics Letters, vol. 113, no. 21, 2018, https://doi.org/10.1063/1.5054054.