Insertion of nanocrystalline diamond film and the addition of hydrogen gas during deposition for adhesion improvement of cubic boron nitride thin film deposited by unbalanced magnetron sputtering method

• Published in: Thin solid films Vol. 534; pp. 380 - 383
• Main Authors: Ko, J.-S., Park, J.-K., Lee, W.-S., Huh, J.-Y., Baik, Y.-J.
• Format: Journal Article
• Language: English
• Published: Amsterdam Elsevier B.V 01.05.2013; Elsevier
• Subjects: Adherent thick film; Condensed matter: structure, mechanical and thermal properties; Cross-disciplinary physics: materials science; rheology; Cubic boron nitride; Delamination; Deposition by sputtering; Exact sciences and technology; Fullerenes and related materials; diamonds, graphite; Hydrogen addition; Interfacial layer; Materials science; Mechanical and acoustical properties; Methods of deposition of films and coatings; film growth and epitaxy; Nanocrystalline diamond buffer; Physical properties of thin films, nonelectronic; Physics; Residual stress reduction; Specific materials; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties); Unbalanced magnetron sputtering; Interfacial layer; Nanocrystalline diamond buffer; Residual stress reduction; Hydrogen addition; Adherent thick film; Unbalanced magnetron sputtering; Delamination; Cubic boron nitride; Cubic lattices; Synthetic diamond; Boron nitride; Thin films; Cathode sputtering; Physical vapor deposition; Silicon; Arsenic additions; Buffer layer; Thick films; Mechanical properties; Residual stresses; Adhesion; Film growth; Sputter deposition; Strip material; Tribology
• ISSN: 0040-6090; 1879-2731
• DOI: 10.1016/j.tsf.2013.02.058

Cubic boron nitride (c-BN) thick film growth was attempted by the addition of hydrogen for residual stress reduction and by using a nanocrystalline diamond (NCD) buffer layer for stabilizing the turbostratic boron nitride interfacial layer. The c-BN films were deposited by the unbalanced magnetron sputtering method. Thin (100μm) Si strips (3×40mm2) were used as substrates. A boron nitride target was used, which was connected to a radio frequency power supply at 400W. High frequency power connected to a substrate holder was used for self-biasing of −40V. The deposition pressure was 0.27Pa with a flow of Ar (18sccm)–N2 (2sccm) mixed gas. Hydrogen gas of 2sccm was added to the Ar–N2 mixed gas. The effect of the addition time of the hydrogen to the Ar–N2 gas during deposition was investigated and found to be critical to the occurrence of the delamination of the c-BN film on the NCD buffer layer. As the addition of the hydrogen was delayed, the delamination started later. C-BN film of 3μm thickness adherent to the substrate was obtained. •A nanocrystalline diamond (NCD) buffer layer was applied to enhance the adhesion.•Hydrogen in the reaction gas caused delamination of the film at c-BN/NCD interface.•A delayed hydrogen addition was effective in inhibiting such delamination.•About 3μm thick c-BN film could be grown.