Gas-surface reactivity in mixed-crystal systems : the reaction of GeH4 and Ge2H6 on Si surfaces

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Bibliographic Details
Published inSurface science Vol. 393; no. 1-3; pp. 205 - 221
Main Authors LAM, A. M, ZHENG, Y.-J, ENGSTROM, J. R
Format Journal Article
LanguageEnglish
Published Lausanne Elsevier Science 10.12.1997
Amsterdam
New York, NY
Subjects
Chemistry
Exact sciences and technology
General and physical chemistry
Solid-gas interface
Surface physical chemistry
Gas solid adsorption
Germane
Surface reaction
Semiconductor materials
Gas solid interface
Silicon
Dissociation
Experimental study
Germanium compound
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ISSN:0039-6028
1879-2758
DOI:10.1016/S0039-6028(97)00587-6