Effect of Si and He implantation in the formation of ultra shallow junctions in Si

• Published in: Thin solid films Vol. 518; no. 9; pp. 2354 - 2356
• Main Authors: Xu, M., Regula, G., Daineche, R., Oliviero, E., Hakim, B., Ntsoenzok, E., Pichaud, B.
• Format: Journal Article Conference Proceeding
• Language: English
• Published: Amsterdam Elsevier B.V 26.02.2010; Elsevier
• Subjects: Boron; Cavities; Condensed matter: electronic structure, electrical, magnetic, and optical properties; Condensed matter: structure, mechanical and thermal properties; Defects and impurities in crystals; microstructure; Diffusion; interface formation; Doping and impurity implantation in other materials; Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures; Electronic transport phenomena in thin films and low-dimensional structures; Exact sciences and technology; Implantation; Physics; Solid surfaces and solid-solid interfaces; Structure and morphology; thickness; Structure of solids and liquids; crystallography; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties); TED; Thin film structure and morphology; Ultra shallow junction; Cavities; Implantation; Boron; TED; Ultra shallow junction; Si; Ion implantation; Annealing; Vacancies; Doses; Electrical properties; Secondary ion mass spectrometry; Hall effect; Transients; Transmission electron microscopy; Silicon; Diffusion
• ISSN: 0040-6090; 1879-2731
• DOI: 10.1016/j.tsf.2009.09.153

He, Si and B implantation are successively combined in order to produce ultra shallow junctions (USJs). Si is implanted at 180 keV to create a ‘vacancy-rich’ layer. Such a layer is however followed by a deeper interstitial rich one. He implantation is performed at a dose high enough (5 × 10 16 cm − 2 ) to create a cavity layer in Si sample. Eventually, B is introduced by low energy ion implantation. Since cavities are known to be sinks for self-interstitials (Is), they might be able to decrease the transient enhanced diffusion (TED) of B during the dopant activation annealing in all processes investigated in this study. The samples are divided in two groups (named S1 and S2) to check the benefits of defect engineering of each implantation element. Hence, sample 1 is first implanted with He, followed by cavity formation annealing and second with B. Si implantation is performed on S2 after cavity formation, and followed by B implantation in the same condition as S1. All samples are characterized by secondary ion mass spectrometry (SIMS), transmission electron microscopy (TEM) and Hall effect measurements. Results show that, in all cases, boron TED is suppressed while working with a cavity layer created before activation annealing. This layer acts as an Is barrier. Finally, an USJ with a low junction depth ( X j = (13 ± 1) nm, determined at 10 18 cm − 3 boron level) is successfully realized.