The effect of Sn impurity on the optical and structural properties of thin silicon films

The effect of tin impurity on the structure and optical properties of thin-film amorphous silicon is investigated. It is established that tin impurity accelerates crystallization of amorphous silicon. Immediately after deposition of a film onto a substrate at a temperature of ∼300°C, there is a crys...

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Published inSemiconductors (Woodbury, N.Y.) Vol. 45; no. 10; pp. 1281 - 1285
Main Authors Voitovych, V. V., Neimash, V. B., Krasko, N. N., Kolosiuk, A. G., Povarchuk, V. Yu, Rudenko, R. M., Makara, V. A., Petrunya, R. V., Juhimchuk, V. O., Strelchuk, V. V.
Format Journal Article
LanguageEnglish
Published Dordrecht SP MAIK Nauka/Interperiodica 01.10.2011
Springer
Subjects
Analysis
Dielectric films
Interfaces
Magnetic Materials
Magnetism
Optical properties
Physics
Physics and Astronomy
Silicon
Surfaces
Thin Films
Toy industry
Raman Spectrum
Amorphous Silicon
Silicon Film
Silicon Nanocrystals
Thin Film Silicon
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Summary:The effect of tin impurity on the structure and optical properties of thin-film amorphous silicon is investigated. It is established that tin impurity accelerates crystallization of amorphous silicon. Immediately after deposition of a film onto a substrate at a temperature of ∼300°C, there is a crystalline phase of silicon in samples with tin. High-vacuum annealing at 350–750°C leads to growth of the crystalline phase in films with tin: nanocrystals grow in size from ∼3.0 to 4.5 nm. At the same time, in films without tin, only the degree of the short-range order increases. Silicon film without tin remains amorphous over the entire range of annealing temperatures.
ISSN:1063-7826
1090-6479
DOI:10.1134/S1063782611100253