Highly Crystalline 2,6,9,10-Tetrakis((4-hexylphenyl)ethynyl)anthracene for Efficient Solution-Processed Field-effect Transistors

• Published in: Bulletin of the Korean Chemical Society Vol. 33; no. 5; pp. 1653 - 1658
• Main Authors: Hur, Jung-A, Shin, Ji-Cheol, Lee, Tae-Wan, Kim, Kyung-Hwan, Cho, Min-Ju, Choi, Dong-Hoon
• Format: Journal Article
• Language: English
• Published: 대한화학회 20.05.2012
• Subjects: 화학
• ISSN: 0253-2964; 1229-5949
• DOI: 10.5012/bkcs.2012.33.5.1653

A new anthracene-containing conjugated molecule was synthesized through the Sonogashira coupling and reduction reactions. 1-Ethynyl-4-hexylbenzene was coupled to 2,6-bis((4-hexylphenyl) ethynyl)anthracene- 9,10-dione through a reduction reaction to generate 2,6,9,10-tetrakis((4-hexylphenyl)ethynyl) anthracene. The semiconducting properties were evaluated in an organic thin film transistor (OTFT) and a single-crystal fieldeffect transistor (SC-FET). The OTFT showed a mobility of around 0.13 cm2 V−1 s−1 (ION/IOFF > 106), whereas the SC-FET showed a mobility of 1.00-1.35 cm2 V−1 s−1, which is much higher than that of the OTFT. Owing to the high photoluminescence quantum yield of 2,6,9,10-tetrakis((4-hexylphenyl)ethynyl) anthracene, we could observe a significant increase in drain current under irradiation with visible light (λ = 538 nm, 12.5 μW/ cm2). KCI Citation Count: 6