The Properties of RF Sputtered Zirconium Oxide Thin Films at Different Plasma Gas Ratio

• Published in: Bulletin of the Korean Chemical Society Vol. 31; no. 2; pp. 397 - 400
• Main Authors: Park, Ju-Yun, Heo, Jin-Kook, Kang, Yong-Cheol
• Format: Journal Article
• Language: English
• Published: 대한화학회 20.02.2010
• Subjects: 화학
• ISSN: 0253-2964; 1229-5949
• DOI: 10.5012/bkcs.2010.31.02.397

Zirconium oxide thin films deposited on the p-type Si(100) substrates by radio-frequency (RF) reactive magnetron sputtering with different plasma gas ratios have been studied by using spectroscopic ellipsometry (SE), atomic force microscopy (AFM), X-ray diffraction (XRD), and X-ray photoelectron spectroscopy (XPS). The deposition of the films was monitored by the oxygen gas ratio which has been increased from 0 to 80%. We found that the thickness and roughness of the zirconium oxide thin films are relatively constant. The XRD revealed that the deposited thin films have polycrystalline phases, Zr(101) and monoclinic ZrO2 (131). The XPS result showed that the oxidation states of zirconium suboxides were changed to zirconia form with increasing O2 gas ratio. KCI Citation Count: 41