Simulation of daytime variations in the characteristics of a-Si:H solar cells

The time dependences of the key characteristic of a -Si:H solar cells over daylight hours are theoretically simulated. The model is used to calculate the time dependences for an arbitrary geographic latitude in the interval 30°–60° and arbitrary day of the year. The calculated results are illustrate...

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Published inTechnical physics Vol. 58; no. 11; pp. 1625 - 1631
Main Authors Kryuchenko, Yu. V., Sachenko, A. V., Bobyl’, A. V., Kostylev, V. P., Sokolovskyi, I. O., Terukov, E. I., Verbitskii, V. N., Nikolaev, Yu. A.
Format Journal Article
LanguageEnglish
Published Boston Springer US 01.11.2013
Springer
Subjects
Analysis
Classical and Continuum Physics
Nuclear radiation
Physics
Physics and Astronomy
Solar batteries
Solar cells
Solid State Electronics
Direct Solar Radiation
Solar Cell
Open Circuit Voltage
Nitrogen Dioxide
Local Coordinate System
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Summary:The time dependences of the key characteristic of a -Si:H solar cells over daylight hours are theoretically simulated. The model is used to calculate the time dependences for an arbitrary geographic latitude in the interval 30°–60° and arbitrary day of the year. The calculated results are illustrated for a geographic latitude of 45° and equinox. The relative variations in the characteristics of the a -Si:H solar cells are valid with a relatively high accuracy for the solar cells based on alternative semiconductors provided that their efficiency ranges form 7 to 20%.
ISSN:1063-7842
1090-6525
DOI:10.1134/S106378421311011X