Interfacial traps and band offset enabled charge separation facilitating current/capacitance hysteresis in dual-oxide layered structure

Gradual switching in the memristor or memcapacitor devices is the key parameter for the next generation of bio-inspired neuromorphic computing. Here, we have fabricated the WOx/ZrOx dual-oxide layered device, which shows the coexistence of gradual resistive and capacitive switching arisen from the c...

Full description

Saved in:
Bibliographic Details
Published inApplied physics letters Vol. 121; no. 18
Main Authors Lyu, Cheng-Han, Chaurasiya, Rajneesh, Lai, Bo-Ru, Chen, Kuan-Ting, Chen, Jen-Sue
Format Journal Article
LanguageEnglish
Published Melville American Institute of Physics 31.10.2022
Subjects
Applied physics
Capacitance
Conduction bands
Electric fields
Hysteresis loops
Memristors
Neuromorphic computing
Oxygen content
Switching
Online AccessGet full text

Cover

More Information
Summary:Gradual switching in the memristor or memcapacitor devices is the key parameter for the next generation of bio-inspired neuromorphic computing. Here, we have fabricated the WOx/ZrOx dual-oxide layered device, which shows the coexistence of gradual resistive and capacitive switching arisen from the current and capacitance hysteresis curves, respectively. The expansion of hysteresis loop can be modulated by altering the oxygen content in the oxide materials. Interestingly, the presence of negative differential resistance (NDR) is dependent on the voltage sweep direction and range of applied bias, which can be reasoned by the local electric field, charge trapping/detrapping, and conduction band offset at the dual-oxide interface. This study provides the concept of the coexistence of current and capacitance hysteresis along with NDR, and it is highly potential for memristor and memcapacitor circuits to explore neuromorphic computing.
Bibliography:ObjectType-Article-1
SourceType-Scholarly Journals-1
ObjectType-Feature-2
content type line 14
ISSN:0003-6951
1077-3118
DOI:10.1063/5.0122317