Influence of the back contact on the electrophysical and functional characteristics of thin-film CdTe Schottky barrier detector structures

• Published in: Russian physics journal Vol. 55; no. 2; pp. 180 - 185
• Main Authors: Mirsagatov, Sh. A., Achilov, А. S., Zaveryukhin, B. N., Baiev, М. S.
• Format: Journal Article
• Language: English
• Published: Boston Springer US 01.07.2012; Springer
• Subjects: Condensed Matter Physics; Detectors; Electric properties; Hadrons; Heavy Ions; Lasers; Mathematical and Computational Physics; Nuclear Physics; Nuclear radiation; Optical Devices; Optics; Photonics; Physics; Physics and Astronomy; Physics of Semiconductors and Dielectrics; Theoretical; films; back contact; cadmium telluride; noise; detector; injection; Schottky barrier

To register nuclear radiation, thin-film CdTe Schottky barrier detector structures are developed. The structures are based on large-block p-CdTe films with resistivity ρ = 10 5 – 10 7 Ω∙сm. The capacitance-voltage, current-voltage, amplitude, and noise characteristics of the structures are measured,...