Influence of the back contact on the electrophysical and functional characteristics of thin-film CdTe Schottky barrier detector structures

To register nuclear radiation, thin-film CdTe Schottky barrier detector structures are developed. The structures are based on large-block p-CdTe films with resistivity ρ = 10 5 – 10 7 Ω∙сm. The capacitance-voltage, current-voltage, amplitude, and noise characteristics of the structures are measured,...

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Bibliographic Details
Published inRussian physics journal Vol. 55; no. 2; pp. 180 - 185
Main Authors Mirsagatov, Sh. A., Achilov, А. S., Zaveryukhin, B. N., Baiev, М. S.
Format Journal Article
LanguageEnglish
Published Boston Springer US 01.07.2012
Springer
Subjects
Condensed Matter Physics
Detectors
Electric properties
Hadrons
Heavy Ions
Lasers
Mathematical and Computational Physics
Nuclear Physics
Nuclear radiation
Optical Devices
Optics
Photonics
Physics
Physics and Astronomy
Physics of Semiconductors and Dielectrics
Theoretical
films
back contact
cadmium telluride
noise
detector
injection
Schottky barrier
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Summary:To register nuclear radiation, thin-film CdTe Schottky barrier detector structures are developed. The structures are based on large-block p-CdTe films with resistivity ρ = 10 5 – 10 7 Ω∙сm. The capacitance-voltage, current-voltage, amplitude, and noise characteristics of the structures are measured, and the mechanisms of charge carrier transfer are identified for different bias voltages. It is established that the functional characteristics of the detector structures are limited by the injection processes arising in the back Mo contact. It is found that the source of electron injection is the MoO 3 compound localized between the film and the molybdenum substrate.
ISSN:1064-8887
1573-9228
DOI:10.1007/s11182-012-9792-7