Unification of asymmetric DG, symmetric DG and bulk undoped-body MOSFET drain current

• Published in: Solid-state electronics Vol. 50; no. 11-12; pp. 1796 - 1800
• Main Authors: Ortiz-Conde, Adelmo, García Sánchez, Francisco J.
• Format: Journal Article
• Language: English
• Published: Oxford Elsevier Ltd 01.11.2006; Elsevier Science
• Subjects: Applied sciences; Asymmetric; Charge-based; Double-gate; Electronics; Exact sciences and technology; MOSFET; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Surface potential-based; Symmetric; Transistors; Undoped; Surface potential-based; Double-gate; MOSFET; DG; Charge-based; Undoped; Asymmetric; Symmetric; Surface charge; Drain current; Dual gate transistor; Surface potential; Double-gate: MOSFET

Classical physics drain current core models for symmetric Double Gate (DG), asymmetric DG, and bulk undoped-body MOSFET are unified using a mixed formulation of charge and surface potential. The resulting expression is a generalized description of the behavior of the silicon body.