Unification of asymmetric DG, symmetric DG and bulk undoped-body MOSFET drain current

Classical physics drain current core models for symmetric Double Gate (DG), asymmetric DG, and bulk undoped-body MOSFET are unified using a mixed formulation of charge and surface potential. The resulting expression is a generalized description of the behavior of the silicon body.

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Bibliographic Details
Published inSolid-state electronics Vol. 50; no. 11-12; pp. 1796 - 1800
Main Authors Ortiz-Conde, Adelmo, García Sánchez, Francisco J.
Format Journal Article
LanguageEnglish
Published Oxford Elsevier Ltd 01.11.2006
Elsevier Science
Subjects
Applied sciences
Asymmetric
Charge-based
Double-gate
Electronics
Exact sciences and technology
MOSFET
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Surface potential-based
Symmetric
Transistors
Undoped
Surface potential-based
Double-gate
MOSFET
DG
Charge-based
Undoped
Asymmetric
Symmetric
Surface charge
Drain current
Dual gate transistor
Surface potential
Double-gate: MOSFET
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Summary:Classical physics drain current core models for symmetric Double Gate (DG), asymmetric DG, and bulk undoped-body MOSFET are unified using a mixed formulation of charge and surface potential. The resulting expression is a generalized description of the behavior of the silicon body.
ISSN:0038-1101
1879-2405
DOI:10.1016/j.sse.2006.10.003