Cd1−xZnxS thin films with low Zn content obtained by an ammonia-free chemical bath deposition process

Cd1−xZnxS films with low Zn content were obtained on glass substrates by an ammonia-free chemical bath deposition process. Alkaline reaction solutions were prepared using cadmium chloride, zinc chloride, sodium citrate, thiourea and potassium hydroxide. As a result of varying the mixture ratio betwe...

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Bibliographic Details
Published inThin solid films Vol. 548; pp. 270 - 274
Main Authors Carreón-Moncada, I., González, L.A., Pech-Canul, M.I., Ramírez-Bon, R.
Format Journal Article
LanguageEnglish
Published Amsterdam Elsevier B.V 02.12.2013
Elsevier
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Summary:Cd1−xZnxS films with low Zn content were obtained on glass substrates by an ammonia-free chemical bath deposition process. Alkaline reaction solutions were prepared using cadmium chloride, zinc chloride, sodium citrate, thiourea and potassium hydroxide. As a result of varying the mixture ratio between Cd and Zn precursors, microstructural studies from X-ray diffraction reveal that the resulting films have hexagonal, wurzite type, crystalline structure with changes in the preferential growth orientation. Important changes on the surface morphology and thickness of the Cd1−xZnxS films were also observed as effects of adding Zn to the CdS lattice. Optical studies show that Cd1−xZnxS thin films with energy band gaps in the range from 2.48 to 2.65eV were obtained. •Cd1−xZnxS layers were grown on glass by ammonia-free chemical bath deposition•Films with low Zn content were obtained using reaction solutions with pH11.5•Zn addition produced changes on the orientation growth and morphology of the films•Cd1−xZnxS films have energy band gap values from 2.48 to 2.65eV
ISSN:0040-6090
1879-2731
DOI:10.1016/j.tsf.2013.10.024