Photoelectric diagnostics method for InGaN/GaN multiple-quantum-well heterostructures

Dependences of the photocurrent of InGaN/GaN multiple-quantum-well heterostructures on reverse bias are studied. Features associated with the sequential passage of the boundary of the space-charge region through the quantum wells of the structure under study are found. It is shown experimentally tha...

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Bibliographic Details
Published inSemiconductors (Woodbury, N.Y.) Vol. 47; no. 1; pp. 58 - 62
Main Authors Baranovskiy, M. V., Glinskii, G. F., Mironova, M. S.
Format Journal Article
LanguageEnglish
Published Dordrecht SP MAIK Nauka/Interperiodica 2013
Springer
Subjects
Analysis
Low-Dimensional Systems
Magnetic Materials
Magnetism
Methods
Physics
Physics and Astronomy
Quantum Phenomena
Quantum wells
Semiconductor Structures
Space Charge Region
Light Emit Diode
Optical Excitation
Reverse Bias
Multiple Quantum
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Summary:Dependences of the photocurrent of InGaN/GaN multiple-quantum-well heterostructures on reverse bias are studied. Features associated with the sequential passage of the boundary of the space-charge region through the quantum wells of the structure under study are found. It is shown experimentally that a reverse-bias region with negative photoconductivity exists for each quantum well. This region vanishes as the energy of optical-excitation photons increases. It is assumed that this effect is caused by a shift of the optical absorption edge in the quantum well, which occurs with partial compensation of the piezoelectric field by the electric field of the p - n junction in the quantum-well region.
ISSN:1063-7826
1090-6479
DOI:10.1134/S1063782613010053