Quantum anomalous Hall effect with Landau levels in nonuniformly strained silicene

We propose a quantum anomalous Hall (QAH) effect with Landau levels in silicene under a nonuniform strain. By applying both a perpendicular electric field and an exchange field, silicene enters a valley-polarized phase first. Then, an arc-shaped strain is used to drive the silicene to a quantum anom...

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Bibliographic Details
Published inJournal of applied physics Vol. 126; no. 10
Main Authors Lan, Tian-Bao, Xu, Yong, Tan, Hui, Wang, Jun, Liu, Jun-Feng
Format Journal Article
LanguageEnglish
Published Melville American Institute of Physics 14.09.2019
Subjects
Applied physics
Electric fields
Electromagnetism
Quantum Hall effect
Resistance
Robustness (mathematics)
Silicene
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Summary:We propose a quantum anomalous Hall (QAH) effect with Landau levels in silicene under a nonuniform strain. By applying both a perpendicular electric field and an exchange field, silicene enters a valley-polarized phase first. Then, an arc-shaped strain is used to drive the silicene to a quantum anomalous Hall effect. Landau levels and edge states are numerically obtained in the band structure of a zigzag ribbon. Two-terminal conductance and four-terminal Hall conductance exhibit correspondence plateaus that are robust against nonmagnetic and magnetic impurities. This scheme provides a new platform to search for QAH phases at high temperatures and with multiple edge channels.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.5121189