Evidence for a build-in remnant field in symmetrically contacted MAPbBr3 x-ray detectors

• Published in: Journal of applied physics Vol. 134; no. 19
• Main Authors: Lédée, Ferdinand, Mayén-Guillen, Javier, Lombard, Stéphanie, Zacarro, Julien, Verilhac, Jean-Marie, Gros-Daillon, Eric
• Format: Journal Article
• Language: English
• Published: Melville American Institute of Physics 21.11.2023
• Subjects: Applied physics; Bias; Charge efficiency; Charge transport; Electric fields; Perovskites; Photoelectric effect; Sensitivity; Sensors; Short circuits; Single crystals; Transport properties; X ray detectors; X-rays
• ISSN: 0021-8979; 1089-7550
• DOI: 10.1063/5.0170580

Millimeter-thick methylammonium lead tribromide (MAPbBr3) single crystal x-ray detectors have recently raised attention due to their high x-ray attenuation efficiency and good charge transport properties. However, an intriguing feature of the photocurrent response of MAPbBr3 detectors has been largely overlooked in the literature. After biasing, transient sensitivity is measured under x rays at short-circuit (bias = 0 V), thus revealing a large remnant electric field that builds up under bias. Here, we exploit the x-ray sensitivity of MAPbBr3 detectors at zero-bias in order to probe the internal built-in field, as well as to investigate the charge transport properties of the perovskite material. Our model derived from the Hecht equation is able to fully rationalize the response of the detectors both at short-circuit and under moderate applied bias. Moreover, we provide a method for the estimation of the internal electric field, and for the sum of the electrons and holes mobility–lifetime products μ e τ e + μ h τ h. This general method could extend to any perovskite-based x-ray detector exhibiting transient sensitivity at zero-bias.