Resonant Tunneling in III-Nitrides
Wide-bandgap semiconductors can sustain high temperatures and high power operation in various important applications such as transistors, light-emitting diodes, and lasers. Although in embryonic stage, one can expect such a resilience in GaN resonant tunneling diodes (RTDs) and superlattices as well...
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Published in | Proceedings of the IEEE Vol. 98; no. 7; pp. 1249 - 1254 |
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Main Author | |
Format | Journal Article |
Language | English |
Published |
New York
IEEE
01.07.2010
The Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
Subjects | |
Online Access | Get full text |
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Summary: | Wide-bandgap semiconductors can sustain high temperatures and high power operation in various important applications such as transistors, light-emitting diodes, and lasers. Although in embryonic stage, one can expect such a resilience in GaN resonant tunneling diodes (RTDs) and superlattices as well with distinct applications. Because of the negative differential conduction, the double barrier resonant tunneling structures could be the basis for new high-power coherent microwave sources operating in W-band and terahertz. In this paper, recent progress in wide-bandgap semiconductor RTDs is discussed. |
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Bibliography: | ObjectType-Article-2 SourceType-Scholarly Journals-1 ObjectType-Feature-1 content type line 23 |
ISSN: | 0018-9219 1558-2256 |
DOI: | 10.1109/JPROC.2009.2039027 |