Resonant Tunneling in III-Nitrides

Wide-bandgap semiconductors can sustain high temperatures and high power operation in various important applications such as transistors, light-emitting diodes, and lasers. Although in embryonic stage, one can expect such a resilience in GaN resonant tunneling diodes (RTDs) and superlattices as well...

Full description

Saved in:
Bibliographic Details
Published inProceedings of the IEEE Vol. 98; no. 7; pp. 1249 - 1254
Main Author Litvinov, Vladimir I.
Format Journal Article
LanguageEnglish
Published New York IEEE 01.07.2010
The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subjects
Coherence
Diodes
Embryo
Gallium nitride
Gallium nitrides
Lasers
Light emitting diodes
Masers
Microwave transistors
Microwaves
Power lasers
Resilience
Resonant tunneling
Resonant tunneling devices
resonant tunneling diodes
Semiconductor lasers
Semiconductors
Temperature
wide-bandgap semiconductors
Online AccessGet full text

Cover

More Information
Summary:Wide-bandgap semiconductors can sustain high temperatures and high power operation in various important applications such as transistors, light-emitting diodes, and lasers. Although in embryonic stage, one can expect such a resilience in GaN resonant tunneling diodes (RTDs) and superlattices as well with distinct applications. Because of the negative differential conduction, the double barrier resonant tunneling structures could be the basis for new high-power coherent microwave sources operating in W-band and terahertz. In this paper, recent progress in wide-bandgap semiconductor RTDs is discussed.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0018-9219
1558-2256
DOI:10.1109/JPROC.2009.2039027