Trapping phenomena in silicon-based nanocrystalline semiconductors

In this paper, the trapping phenomena in silicon-based nanocrystalline semiconductors are studied. We propose a general and complete model for optical charging spectroscopy measurements, which takes into account the trapping–detrapping–retrapping processes and all the types of discharge currents tha...

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Bibliographic Details
Published inSolid-state electronics Vol. 51; no. 10; pp. 1328 - 1337
Main Authors Ciurea, M.L., Iancu, V., Mitroi, M.R.
Format Journal Article Conference Proceeding
LanguageEnglish
Published Oxford Elsevier Ltd 01.10.2007
Elsevier Science
Subjects
Cross-disciplinary physics: materials science; rheology
Exact sciences and technology
Materials science
Nanocrystalline materials
Nanocrystalline silicon
Nanoscale materials and structures: fabrication and characterization
Physics
Porous materials; granular materials
Quantum wells
Specific materials
Traps
Nanocrystalline silicon
73.50.Gr
Traps
Optical measurement
Optical spectrometry
Discharge current
Porous materials
Multiple quantum well
Silicon
Traps; Nanocrystalline silicon
Calcium fluorides
Nanocrystal
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Summary:In this paper, the trapping phenomena in silicon-based nanocrystalline semiconductors are studied. We propose a general and complete model for optical charging spectroscopy measurements, which takes into account the trapping–detrapping–retrapping processes and all the types of discharge currents that can occur in a nanocrystalline system. The model was applied to the measurements performed on multi-quantum well structures, (nc-Si/CaF 2) 50, as well as on nanocrystalline porous silicon. This way, the trap parameters that are not directly measurable were determined.
ISSN:0038-1101
1879-2405
DOI:10.1016/j.sse.2007.07.002